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R6012ANJTL

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 10V DRIVE LPTS
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Inventory: 47
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 9.6 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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