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IXTA32N20T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 32A TO-263
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (IXTA)

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 72MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 200W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.76nF
Drain to Source Resistance 78mOhm
Rds On Max 72 mΩ

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