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Transistors - FETs, MOSFETs - Single
IXTA50N20P-TRL

IXTA50N20P-TRL

RoHS

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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description IXTA50N20P TRL

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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Technical

Operating Temperature -55°C~175°C TJ

Part Status Active

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 360W Tc

FET Type N-Channel

Rds On (Max) @ Id, Vgs 60m Ω @ 25A, 10V

Vgs(th) (Max) @ Id 5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V

Current - Continuous Drain (Id) @ 25°C 50A Tc

Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V

Drain to Source Voltage (Vdss) 200V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Physical

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Alternative Model

STMicroelectronics

ON Semiconductor

ON Semiconductor

Vishay Semiconductor Diodes Division

Taiwan Semiconductor Corporation

Diodes Incorporated

Rochester Electronics, LLC

Microsemi Corporation

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