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IPW60R280E6FKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 13.8A TO247
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 284 mJ
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