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IXTY1N80

IXYS
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 750MA TO-252AA
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Tc
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 750mA
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ
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