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SIE808DF-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 60A POLARPAK
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Technical Details
Supply Chain
Factory Lead Time 27 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Supplier Device Package 10-PolarPAK? (L)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Power Dissipation 5.2W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 8.8nF
Drain to Source Resistance 1.6mOhm
Rds On Max 1.6 Ω
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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