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TK11A55D(STA4,Q,M)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 550V 11A TO-220SIS
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 630mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.35nF
Rds On Max 630 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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