Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.7MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 206A
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 206A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 140 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 206A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 650A
Avalanche Energy Rating (Eas) 480 mJ