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RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 8A TO-220SIS
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Inventory: 151
Minimum: 1
Total Price: USD $2.3
Unit Price: USD $2.30076
≥1 USD $2.30076
≥10 USD $1.845598
≥100 USD $1.518594
≥500 USD $1.284933
≥1000 USD $1.090247
≥3000 USD $1.035739

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Capacitance 570pF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 30W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 300V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 570pF
FET Feature Super Junction
Drain to Source Resistance 420mOhm
Rds On Max 500 mΩ

Compliance

RoHS Status RoHS Compliant
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