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IPB50R140CPATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 550V 23A 3-Pin(2+Tab) TO-263 T/R
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Inventory: 6276
Minimum: 1
Total Price: USD $28.19
Unit Price: USD $28.190348
≥1 USD $28.190348
≥10 USD $23.131028
≥100 USD $22.40784
≥500 USD $21.68565
≥1000 USD $20.962463

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 192W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 192W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3.5V @ 930μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2540pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 14 ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 56A

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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