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IPT026N10N5ATMA1

Infineon Technologies
RoHS
/
Package 8-PowerSFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRENCH >=100V
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Inventory: 1726
Minimum: 1
Total Price: USD $1.62
Unit Price: USD $1.62333
≥1 USD $1.62333
≥10 USD $1.575585
≥100 USD $1.52784
≥500 USD $1.468158

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerSFN

Technical

Operating Temperature -55°C~175°C TJ
Series OptiMOS?5
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 214W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 158μA
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 27A Ta 202A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V

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