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IRFSL38N20DPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew
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Inventory: 7735
Minimum: 1
Total Price: USD $4.39
Unit Price: USD $4.387022
≥1 USD $4.387022
≥10 USD $4.138697
≥100 USD $3.90443
≥500 USD $3.683427
≥1000 USD $3.474929

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3

Technical

Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 300W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Rise Time 95 ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.054Ohm
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 460 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 9.65mm
Length 10.67mm
Width 4.826mm

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