SIHG460B-GE3

Vishay Siliconix

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS

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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 20.82mm

Length 15.87mm

Width 5.31mm

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2012

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Technology MOSFET (Metal Oxide)

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 278W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 278W

Case Connection DRAIN

Turn On Delay Time 24 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 250m Ω @ 10A, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 3094pF @ 100V

Current - Continuous Drain (Id) @ 25°C 20A Tc

Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V

Rise Time 31 ns

Drain to Source Voltage (Vdss) 500V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Fall Time (Typ) 56 ns

Turn-Off Delay Time 117 ns

Continuous Drain Current (ID) 20A

Threshold Voltage 2V

JEDEC-95 Code TO-247AC

Gate to Source Voltage (Vgs) 20V

Drain-source On Resistance-Max 0.25Ohm

Pulsed Drain Current-Max (IDM) 62A

DS Breakdown Voltage-Min 500V

Compliance

Radiation Hardening No

REACH SVHC Unknown

RoHS Status ROHS3 Compliant

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