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IXTP12N50P

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 12A TO-220
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Inventory: 190
Minimum: 1
Total Price: USD $3.46
Unit Price: USD $3.465
≥1 USD $3.465
≥10 USD $2.742986
≥100 USD $2.351118
≥500 USD $2.089866
≥1000 USD $1.789446
≥3000 USD $1.684951

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55?°C~150?°C TJ
Packaging Tube
Published 2006
Series Polara??
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m ?? @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250??A
Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ?±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 600 mJ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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