Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFET?, PolarP2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
Pulsed Drain Current-Max (IDM) 8A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 200 mJ