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AUIRF7738L2TR

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric L6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 315A DIRECTFET
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Inventory: 1901
Minimum: 1
Total Price: USD $28.51
Unit Price: USD $28.50855
≥1 USD $28.50855
≥10 USD $23.392373
≥100 USD $22.661205
≥500 USD $21.930038
≥1000 USD $21.19887

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric L6
Number of Pins 13
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N7
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 94W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 94W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 109A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7471pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs 194nC @ 10V
Rise Time 77ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.0016Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 736A
Avalanche Energy Rating (Eas) 538 mJ

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