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IXTA48N20T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel 200 V 48 A 50 mO Surface Mount Trench Power Mosfet - TO-263
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Inventory: 431
Minimum: 1
Total Price: USD $3.86
Unit Price: USD $3.86232
≥1 USD $3.86232
≥10 USD $3.063984
≥100 USD $2.626285

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series Trench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 48A
JEDEC-95 Code TO-263AA
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 130A
Avalanche Energy Rating (Eas) 500 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free
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