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IPC302N08N3X1SA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 1A SAWN ON FOIL
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Technical

Packaging Bulk
Published 2013
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position UNSPECIFIED
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XXUC-N
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270μA
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1A Tj
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain-source On Resistance-Max 0.1Ohm
DS Breakdown Voltage-Min 80V

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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