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SUM52N20-39P-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 52A D2PAK
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Inventory: 262
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 4.83mm
Length 10.41mm
Width 9.65mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.12W Ta 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 38m Ω @ 20A, 15V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 15V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 10V 15V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 34 ns
Reverse Recovery Time 133 ns
Continuous Drain Current (ID) 52A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.094Ohm
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 4.5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

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