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TK16E60W,S1VX

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-220
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Inventory: 190
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.130544
≥1 USD $1.130544
≥10 USD $1.097293
≥100 USD $1.064041
≥500 USD $1.022477

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Power Dissipation 130W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 790μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
Current - Continuous Drain (Id) @ 25°C 15.8A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 15.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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