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RoHS
RoHS RoHS compliant
Package 4-VSFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch DTMOSIV 600 V 156W 1680pF 20A
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Inventory: 1003
Minimum: 1
Total Price: USD $1.4
Unit Price: USD $1.399565
≥1 USD $1.399565
≥10 USD $1.358402
≥100 USD $1.317238
≥500 USD $1.265783

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Number of Pins 5
Supplier Device Package 4-DFN-EP (8x8)

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 156W Tc
Turn On Delay Time 50 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.68nF
FET Feature Super Junction
Drain to Source Resistance 170mOhm
Rds On Max 170 mΩ
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