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SIHP18N60E-GE3

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 18A TO220AB
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Technical Details

Technical

Technology MOSFET (Metal Oxide)
Power Dissipation-Max 179W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

Supply Chain

Factory Lead Time 14 Weeks

Alternative Model

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