SQM120N04-1M9_GE3

Vishay Siliconix

RoHS

RoHS compliant

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description VISHAY SQM120N04-1M9-GE3MOSFET Transistor, N Channel, 120 A, 40 V, 0.0015 ohm, 10 V, 3 V

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Inventory: 4029

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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package TO-263 (D2Pak)

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tape & Reel (TR)

Published 2017

Series TrenchFET?

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 300W Tc

FET Type N-Channel

Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id 3.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 8790pF @ 25V

Current - Continuous Drain (Id) @ 25°C 120A Tc

Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V

Drain to Source Voltage (Vdss) 40V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

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