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IPB180P04P403ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263
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Inventory: 27224
Minimum: 1
Total Price: USD $6.2
Unit Price: USD $6.202455
≥1 USD $6.202455
≥10 USD $5.089245
≥100 USD $4.929645
≥500 USD $4.771043
≥1000 USD $4.61244

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON

Dimensions

Height 4.4mm
Length 10mm
Width 9.25mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 48 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 410μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 17640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 31 ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage -40V
Avalanche Energy Rating (Eas) 90 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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