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Transistors - FETs, MOSFETs - Single
IXTA200N055T2-TRL

IXTA200N055T2-TRL

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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description IXTA200N055T2 TRL

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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Technical

Operating Temperature -55°C~175°C TJ

Part Status Active

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 360W Tc

FET Type N-Channel

Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 6970pF @ 25V

Current - Continuous Drain (Id) @ 25°C 200A Tc

Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V

Drain to Source Voltage (Vdss) 55V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Alternative Model

ON Semiconductor

Infineon Technologies

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Vishay Semiconductor Diodes Division

Comchip Technology

Taiwan Semiconductor Corporation

Nexperia USA Inc.

Microsemi Corporation

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