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SQD40N06-25L-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 30A TO252
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Inventory: 10022
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.358103
≥1 USD $0.358103
≥10 USD $0.294263
≥100 USD $0.285285
≥500 USD $0.276308
≥1000 USD $0.266333

Technical Details

Supply Chain

Factory Lead Time 21 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 22mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 1.4W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 100A

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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