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SIE812DF-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 60A 10-POLARPAK
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Inventory: 6125
Minimum: 1
Total Price: USD $3.38
Unit Price: USD $3.38352
≥1 USD $3.38352
≥10 USD $2.776043
≥100 USD $2.68926
≥500 USD $2.602478
≥1000 USD $2.515695

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 2.6MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-XDSO-N4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8300pF @ 20V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 33A
Drain to Source Breakdown Voltage 40V

Dimensions

Height 800μm
Length 6.15mm
Width 5.16mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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