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SIE812DF-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 60A 10-POLARPAK
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Inventory: 6125
Minimum: 1
Total Price: USD $3.38
Unit Price: USD $3.38352
≥1 USD $3.38352
≥10 USD $2.776043
≥100 USD $2.68926
≥500 USD $2.602478
≥1000 USD $2.515695

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 2.6MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-XDSO-N4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8300pF @ 20V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 33A
Drain to Source Breakdown Voltage 40V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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