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IPB240N03S4LR8ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH TO263-7
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Inventory: 1131
Minimum: 1
Total Price: USD $2.39
Unit Price: USD $2.38592
≥1 USD $2.38592
≥10 USD $2.315746
≥100 USD $2.245572
≥500 USD $2.157854

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.76m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Turn-Off Delay Time 142 ns
Continuous Drain Current (ID) 240A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 960A
Avalanche Energy Rating (Eas) 945 mJ
Max Junction Temperature (Tj) 175°C

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON

Alternative Model

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