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SPP18P06PHKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 60V 18.7A 3-Pin (3+Tab) TO-220AB Tube
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 81.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18.7A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 18.6A
Drain-source On Resistance-Max 0.13Ohm
Pulsed Drain Current-Max (IDM) 74.4A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 150 mJ

Compliance

RoHS Status RoHS Compliant
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