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ZXM64N035GTA
Diodes IncorporatedRoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 35V 6.7A SOT223
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Inventory: 13903
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.5586
≥1 USD $0.5586
≥10 USD $0.45885
≥100 USD $0.443888
≥500 USD $0.429923
≥1000 USD $0.415958
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Dimensions
Height 1.65mm
Length 6.7mm
Width 3.7mm
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 35V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 6.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 4.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 4.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20.5 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.8A
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 35V
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