SPP80P06PBKSA1

Infineon Technologies

RoHS

Package TO-220-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220AB

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-220-3

Supplier Device Package PG-TO220-3

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 1999

Series SIPMOS?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 340W Tc

FET Type P-Channel

Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V

Vgs(th) (Max) @ Id 4V @ 5.5mA

Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V

Current - Continuous Drain (Id) @ 25°C 80A Tc

Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

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