Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 14MOhm
Voltage - Rated DC -12V
Technology MOSFET (Metal Oxide)
Current Rating -11.5A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 8.8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 11.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3529pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 8.8ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 225 ns
Turn-Off Delay Time 291 ns
Continuous Drain Current (ID) -11.5A
Threshold Voltage -900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage -12V
Nominal Vgs -900 mV