Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12.5A Ta
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 12.5A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 400 mJ