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TPCF8104(TE85L,F,M

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 6A VS-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V

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