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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 500V 2A TO220AB
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Inventory: 1529
Minimum: 1
Total Price: USD $80.96
Unit Price: USD $80.9571
≥1 USD $80.9571
≥10 USD $78.42744
≥100 USD $75.896783
≥500 USD $73.367123
≥1000 USD $65.777145

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 9.28mm
Length 10.28mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 6Ohm
Terminal Finish Tin (Sn)
Additional Feature HIGH VOLTAGE
Subcategory Other Transistors
Voltage - Rated DC -500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1183pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2A
Threshold Voltage -3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 80 mJ
Nominal Vgs 3 V
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