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MMFT960T1G

ON Semiconductor
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 300MA SOT223
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Inventory: 26060
Minimum: 1
Total Price: USD $3.92
Unit Price: USD $3.917183
≥1 USD $3.917183
≥10 USD $3.214943
≥100 USD $3.114195
≥500 USD $3.013448
≥1000 USD $2.913698

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.7Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.3A
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1 V

Dimensions

Height 1.65mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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