Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 13.9mOhm
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 51A
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Power Dissipation 80W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 35 ns
Nominal Vgs 4 V