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RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 29A TO-262
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Inventory: 2021
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.564585
≥1 USD $0.564585
≥10 USD $0.46284
≥100 USD $0.448875
≥500 USD $0.433913
≥1000 USD $0.419948

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 40mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 29A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 68W Tc
Power Dissipation 68W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 49ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 700pF
Drain to Source Resistance 40mOhm
Rds On Max 40 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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