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IRFIB8N50KPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 6.7A TO220FP
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Inventory: 6103
Minimum: 1
Total Price: USD $2.59
Unit Price: USD $2.586518
≥1 USD $2.586518
≥10 USD $2.12268
≥100 USD $2.055848
≥500 USD $1.990013
≥1000 USD $1.92318

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8.4 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 6.7A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 27A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 290 mJ

Dimensions

Height 9.8mm
Length 10.63mm
Width 4.83mm

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