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IRF3711ZLPBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 92A TO-262
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 92A
Power Dissipation-Max 79W Tc
Element Configuration Single
Power Dissipation 79W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 92A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 16ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 92A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.15nF
Drain to Source Resistance 7.3mOhm
Rds On Max 6 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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