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IRL1004LPBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 130A TO-262
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 130A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Power Dissipation 150W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Rise Time 210ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Input Capacitance 5.33nF
Drain to Source Resistance 9mOhm
Rds On Max 6.5 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 10.54mm

Alternative Model

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