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SPB35N10 G

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A D2PAK
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44m Ω @ 26.4A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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