SPI07N65C3HKSA1

Infineon Technologies

RoHS

Package TO-262-3 Long Leads, I2Pak, TO-262AA

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-262

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2008

Series CoolMOS?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Additional Feature AVALANCHE RATED

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Reach Compliance Code compliant

JESD-30 Code R-PSIP-T3

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 83W Tc

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V

Vgs(th) (Max) @ Id 3.9V @ 350μA

Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V

Current - Continuous Drain (Id) @ 25°C 7.3A Tc

Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V

Drain to Source Voltage (Vdss) 650V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Drain Current-Max (Abs) (ID) 7.3A

Drain-source On Resistance-Max 0.0006Ohm

Pulsed Drain Current-Max (IDM) 21.9A

DS Breakdown Voltage-Min 650V

Avalanche Energy Rating (Eas) 230 mJ

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