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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 47A I2PAK
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Inventory: 970
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.433971
≥1 USD $0.433971
≥10 USD $0.421207
≥100 USD $0.408444
≥500 USD $0.392489

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series SIPMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code unknown
Current Rating 47A
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 175W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 47A
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 188A
Avalanche Energy Rating (Eas) 400 mJ
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