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BSC119N03S G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A TDSON-8
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Inventory: 4300
Minimum: 1
Total Price: USD $8.75
Unit Price: USD $8.753063
≥1 USD $8.753063
≥10 USD $7.182
≥100 USD $6.957563
≥500 USD $6.733125
≥1000 USD $6.508688

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.9A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11.9A
Drain-source On Resistance-Max 0.0119Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 60 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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