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BSO200N03S

Infineon Technologies
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, N, 30V, SO-8
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Inventory: 15048
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.580545
≥1 USD $0.580545
≥10 USD $0.476805
≥100 USD $0.461843
≥500 USD $0.44688
≥1000 USD $0.431918

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 27mOhm
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.56W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id 2V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Rise Time 2.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1.6V
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.6 V
Feedback Cap-Max (Crss) 46 pF

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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