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IPD12N03LB G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A TO-252
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Inventory: 2660
Minimum: 1
Total Price: USD $17.06
Unit Price: USD $17.063235
≥1 USD $17.063235
≥10 USD $14.00091
≥100 USD $13.563008
≥500 USD $13.125105
≥1000 USD $12.6882

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 52W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.0116Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 64 mJ

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