SIHD7N60ET4-GE3

Vishay Siliconix

RoHS

Package TO-252-3, DPak (2 Leads + Tab), SC-63

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 600V 7A 3-Pin TO-252

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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Series E

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

Technology MOSFET (Metal Oxide)

Terminal Form GULL WING

JESD-30 Code R-PSSO-G2

Number of Elements 1

Power Dissipation-Max 78W Tc

Case Connection DRAIN

Turn On Delay Time 13 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V

Current - Continuous Drain (Id) @ 25°C 7A Tc

Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V

Rise Time 13ns

Drain to Source Voltage (Vdss) 600V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 14 ns

Turn-Off Delay Time 24 ns

Continuous Drain Current (ID) 7A

JEDEC-95 Code TO-252AA

Gate to Source Voltage (Vgs) 30V

Drain Current-Max (Abs) (ID) 7A

Drain-source On Resistance-Max 0.6Ohm

Pulsed Drain Current-Max (IDM) 18A

DS Breakdown Voltage-Min 609V

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins 3

Transistor Element Material SILICON

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