Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 42A
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0145Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 55 mJ