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IPP50R520CPXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 7.1A TO-220
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Inventory: 5533
Minimum: 1
Total Price: USD $5.67
Unit Price: USD $5.671455
≥1 USD $5.671455
≥10 USD $5.35043
≥100 USD $5.047574
≥500 USD $4.761868
≥1000 USD $4.492318

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 66W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 7.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 166 mJ

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